000 | 03610nam a22004815i 4500 | ||
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001 | 978-3-540-39456-3 | ||
003 | DE-He213 | ||
005 | 20190213151923.0 | ||
007 | cr nn 008mamaa | ||
008 | 121227s1983 gw | s |||| 0|eng d | ||
020 |
_a9783540394563 _9978-3-540-39456-3 |
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024 | 7 |
_a10.1007/3-540-11986-8 _2doi |
|
050 | 4 | _aQC173.45-173.458 | |
072 | 7 |
_aPHF _2bicssc |
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072 | 7 |
_aSCI077000 _2bisacsh |
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082 | 0 | 4 |
_a530.41 _223 |
245 | 1 | 0 |
_aDefect Complexes in Semiconductor Structures _h[electronic resource] : _bProceedings of the International School Held in Mátrafüred, Hungary September 13–17, 1982 / _cedited by J. Giber, F. Beleznay, I. C. Szép, J. László. |
264 | 1 |
_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg, _c1983. |
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300 |
_aVI, 311 p. 81 illus. _bonline resource. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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347 |
_atext file _bPDF _2rda |
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490 | 1 |
_aLecture Notes in Physics, _x0075-8450 ; _v175 |
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505 | 0 | _aA technologist's view on defects -- Characterization of impurities and defects by electron paramagnetic resonance and related techniques -- Review of the possibilities of electron microscopy in the identification of defect structures -- Electrical and optical measuring techniques for flaw states -- Theory of defect complexes -- Critical comparison of the theoretical models for anomalous large lattice relaxation in III–V compounds -- Vacancy related structure defects in SiO2 — Cyclic cluster calculations compared with experimental results -- A new model for the Si-A center -- Defect complexing in iron-doped silicon -- Photoluminescence of defect complexes in silicon -- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon -- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon -- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c -- On the field dependence of capture and emission processes at deep centres -- Lattice matched heterolayers -- Compositional transition layers in heterostructure -- Defect complexes in III–V compounds -- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs -- Main electron traps in gaas: Aggregates of antisite defects -- Defect reactions in gap caused by zinc diffusion -- Nonstatistical defect surroundings in mixed crystals — the selfactivated luminescence centre in ZnSxSe1-x -- Structure and properties of the Si-SiO2 interregion -- Radiation defects of the semiconductor-insulator interface -- Analysis of Si/SiO2 interface defects by the method of term spectroscopy -- Theoretical aspects of laser annealing -- Radiation methods for creation of heterostructures on silicon -- Ion beam gettering in GaP -- Panel discussion -- Mechanical stress induced defect creation in GaP. | |
650 | 0 | _aPhysics. | |
650 | 0 | _aCondensed matter. | |
650 | 1 | 4 | _aPhysics. |
650 | 2 | 4 | _aCondensed Matter Physics. |
700 | 1 |
_aGiber, J. _eeditor. |
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700 | 1 |
_aBeleznay, F. _eeditor. |
|
700 | 1 |
_aSzép, I. C. _eeditor. |
|
700 | 1 |
_aLászló, J. _eeditor. |
|
710 | 2 | _aSpringerLink (Online service) | |
773 | 0 | _tSpringer eBooks | |
776 | 0 | 8 |
_iPrinted edition: _z9783540119869 |
830 | 0 |
_aLecture Notes in Physics, _x0075-8450 ; _v175 |
|
856 | 4 | 0 | _uhttp://dx.doi.org/10.1007/3-540-11986-8 |
912 | _aZDB-2-PHA | ||
912 | _aZDB-2-LNP | ||
912 | _aZDB-2-BAE | ||
999 |
_c12334 _d12334 |